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Dr. Isabel Harrysson Rodrigues

Researcher

About

Bio

Dr. Isabel Harrysson Rodrigues is a nanotechnology scientist specializing in developing state-of-the-art microdevices, such as electrical components for sensing and detection. Her current research focuses on designing and fabricating robust III-V material-based microdevices for the extreme environments found in space.
 
Currently, Isabel Harrysson Rodrigues is a Postdoctoral Research Fellow at JPL, NASA, collaborating with Dr. Mina Rais-Zadeh's group (at JPL) in the Microdevices and Sensor Systems’ Microdevice Laboratory, where they are developing sensors and detectors for harsh space environments, such as elevated temperatures (< 600 deg C) and intense radiation. Their components will be used mainly for thermal sensing at the surface of Venus and gathering information for future missions to yet-unexplored planetary bodies.

In addition, Isabel is also working on a project in Matthew Shaw's group, where she is developing the readout chain for their superconducting nanowire single-photon detectors (SNSPDs) in a project they called PEACOQ - Performance-Enhanced Array for Counting Optical Quanta.

While earning valuable experience during her research visit at Stanford University, in David Goldhaber-Gordon's Group, and her Ph.D. from Chalmers University of Technology, Isabel Harrysson Rodrigues worked on various device fabrication techniques, as well as development and performance of these devices, mainly high electron mobility transistors (HEMTs) and 2D-materials, such as AlGaAs/InP HEMTs and twisted bilayer graphene, including hexagonal boron nitride. She spent numerous hours in high-quality cleanroom facilities fabricating microdevices for various applications, such as low-noise amplifiers, terahertz biosensing, and fundamental research in carrier transport, spintronics, and superconductivity. She also worked on simulations of electron transport, analysis of charge carrier defects affecting device performance, and data analysis of the DC characteristics in various transistor configurations, all pivotal parts of her thesis.

Before her move to the US, she also worked at Ericsson AB in Gothenburg, developing the next-generation 6G platform, which required advanced PCB design, RF measurements, and rigorous verification schemes for communication.

When not involved in research, Isabel Harrysson Rodrigues has pursued sports and art in her spare time, playing high-level soccer for many years and representing Sweden in the national team of footvolley until her move to the US (2023). Staying mentally and physically healthy has always been a consistent interest in her life, where making art has constituted her time to relax and unwind. Upon encouragement to share her art, she created a webpage to display some of her pieces: www.isabelharryssonrodrigues.com. Other key ingredients in her life are spending time with family and loved ones, including her dog, preferably outdoors in the forest or by the beach.

Education

Stanford University (United States)

  • Visiting Researcher in David Goldhaber-Gordon group (March 2022-August 2022)

Chalmers University of Technology (Sweden)

  • Ph.D. in Microtechnology and Nanoscience (2019-2022, year 3-5), Thesis: “Study of charge carrier transport in field-effect transistors with two-dimensional electron gas using geometrical magnetoresistance effect.”
  • Lic. in Engineering and Microtechnology and Nanoscience (2017-2019, year 1-2), Thesis: “Cryogenic InP High Electron Mobility Transistors in a Magnetic Field”
  • MSc. in Nanotechnology (2015-2017), Thesis: “Quantum Transport in Materials with Strong Spin-orbit Coupling”
  • 2012-2015: BSc. in Engineering Physics

Katrinelund Elite Sports High School (Sweden)

  • Sports (soccer) and Natural Science (2009-2012)

Experience

Professional Experience

NASA Jet Propulsion Laboratory (United States)

  • Postdoctoral Research Fellow, Section 38; Microdevices and Sensor Systems, Microdevice Laboratory (2023-present:)

Ericsson AB (Sweden): 2022-2023: Microwave designer for 6G testbed

Collaborations (Sweden)

  • Debbie G. Senesky at Stanford University: Infrared resonator measurements in harsh environments, e.g., extreme temperatures (2023-2024)
  • Fingerprint Cards AB: Design and fabrication of THz sensors/detectors for skin dept fingerprint scanning (2021)
  • Low Noise Factory AB: Fabrication and optimization of high electron mobility transistors and low noise amplifiers (2017-2019)
  • Quantum Device Physics Laboratory at Chalmers: low noise amplifiers for a quantum computer read-out (2017-2019)
  • Project assistant: Fabrication of AlGaAs/InP HEMTs, microwave technology. (2017)

Conference contributions:

  • Abstract & Poster at conf. Hilton Head 2024 Workshop, Hilton Head Island, SC, USA (June 2024), "Sparse Array of Thermal Resonators for Infrared Detection and Imaging"
  • Abstract & Talk at conf. AVS69 "AlGaN/GaN HEMTs with submicron gates for high-frequency operation in harsh space environments."
  • Abstract & Poster at conf.: Compound Semiconductor Week 2022, Ann Arbor, MI, USA (June 2022), "Charge carrier transport in graphene field-effect transistor scaled down to submicron gate lengths"
  • Abstract & Poster at the conf.: Graphene Week 2021, (Online) (Sep. 2021), "Evaluation and Study of Mobility in GFETs by geometrical magnetoresistance."
  • Abstract & Talk at conf. Workshop: WOCSDICE 2019, Cabourg, France (June 2019), "Strong Geometrical Magnetoresistance and Angular Dependence in InP HEMTs for cryogenic LNAs."
  • Abstract & Poster, Nominated for best paper, at conf.: Compound Semiconductor Week 2019, Nara, Japan (May 2019), "Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field."
  • Abstract & Talk at conf.: Compound Semiconductor Week 2018, (Boston) Cambridge, MA, USA (June 2018), "Magnetic Influence on Cryogenic InP HEMT DC Characteristics."


Project Assistant (Sweden): Fabrication of AlGaAs/InP HEMTs, microwave technology (2017)
 

Teaching assistant (Sweden): Course in Micro Electronics at Chalmers University of Technology, Gothenburg (2017-2021)


Mentor (Sweden): In Mathematics and physics for high school students (2015-2016)

Achievements

Awards & Recognitions

Publications

  1. "GaN Photonic Crystals: Spectral Dynamics in UV, X-Ray, and Alpha Radiation," Yasar, F., Kawaguchi, N., Yanagida, T., Harrysson Rodrigues, I., Ceballos, Y.E., Prado-Rivera, R. and Keo, S. Adv. Photonics Res. 2400075. (2024)
  2. "Charge carrier transport in field-effect transistors with two-dimensional electron gas channels studied using geometrical magnetoresistance effect,” I. Harrysson Rodrigues, Ph.D. Thesis, Chalmers University of Technology, (2022)
  3. “Mobility and quasi-ballistic charge carrier transport in graphene field-effect transistors,” I. Harrysson Rodrigues, N. Rorsman, and A. Vorobiev, Journal of Applied Physics (2022)
  4. “Geometrical magnetoresistance effect and mobility in graphene field-effect transistors,” I. Harrysson Rodrigues, A. Generalov, A. Md. Hoque, M. Soikkeli, A. Murros, S. Arpiainen, and A. Vorobiev, Applied Physics Letters, (2022)
  5. “Low-field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP HEMTs,” I. Harrysson Rodrigues and A. Vorobiev, IEEE Transactions of Electron Devices, (2021)
  6. “On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field,” I. Harrysson Rodrigues, D. Niepce, A. Pourkabirian, G. Moschetti, J. Schleeh, T. Bauch, and J. Grahn, AIP Advances 9, 085004 (2019); https://doi.org/10.1063/1.5107493
  7. “Origin and evolution of surface spin current in topological insulators,” A. Dankert, P. Bhaskar, D. Khokhriakov, I. Harrysson Rodrigues, B. Karpiak, M. V. Kamalakar, S. Charpentier, I. Garate, S. P., Dash, Physics Review B (2018)

https://scholar.google.com/citations?hl=en&user=uMkfaF0AAAAJ