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Dr. Hannes Kraus

Researcher

About

Bio

Dr. Hannes Kraus is a Technologist in the Advanced Microsensors and Microsystems group at NASA Jet Propulsion Laboratory.

Hannes was born and raised in Würzburg, a picturesque city in southern Germany, where he also obtained his diploma in physics (Dipl.-Phys.) in 2009, researching the spin properties of organic semiconductors with electron paramagnetic resonance spectroscopy. He earned a “summa cum laude” doctoral degree from the University of Würzburg in 2014, studying organic and inorganic semiconductors with spin resonance methods.  Also in 2014, Hannes got selected for a Marie-Sklodowska-Curie Actions (MCSA-COFUND) exchange scholarship from the German Academic Exchange Service (DAAD), bringing him to Japan. He joined the Group of Dr. Takeshi Ohshima at the Takasaki radiation research facility of Japan Atomic Energy Agency (JAEA). Here, he intensified his work on silicon carbide, learning how to optimize the engineering of quantum centers in the crystal, and how to characterize them with confocal optical spectroscopy. In 2016, he returned to Würzburg, Germany, to foster the collaboration between the institutes in Japan and Germany. He left Germany for the U.S. in 2017 after being selected as a NASA Postdoctoral Fellow at JPL, working on novel magnetometers leveraging atomic-scale quantum centers in the rugged material silicon carbide, to application maturity.

Since 2020, Hannes is a Technologist at JPL, focusing on planetary mass spectrometry, while still working on laser absorption spectroscopy and quantum solid state magnetometers and other quantum sensors.

Education

  • 2014 Doctor of Physics (Dr. rer. nat., summa cum laude, University of Würzburg, Germany)
  • 2009 Diploma of Physics (University of Würzburg, Germany)

Research Interests

  • Planetary Science instrument engineering
  • Mass Spectrometry
  • Magnetometry
  • Optical Spectroscopy and Confocal Microscopy
  • Electron Paramagnetic Resonance Spectroscopy

Experience

Professional Experience

  • Since 2020-07
    • NASA Jet Propulsion Laboratory, Pasadena CA, USA
    • Technologist (389T)
  • 2017-08 – 2020-07
    • NASA Jet Propulsion Laboratory, Pasadena CA, USA
    • NASA Postdoctoral Program (389R)
  • 2016-08 ­– 2017-08
    • University  of Würzburg, Germany
    • Staff researcher
  • 2016-01 – 2016-07
    • University of Würzburg, Germany
    • Staff researcher, returning MCSA/DAAD PRIME fellow
  • 2015
    • Japan Atomic Energy Agency (JAEA), Takasaki, Japan
    • Staff researcher, MCSA/DAAD PRIME fellowship
  • 2010 ­– 2014
    • University of Würzburg, Germany
    • Doctoral Candidate / Research Scientist (0.5FTE)

Achievements

Awards & Recognitions

Publications

Peer-reviewed Publications

  1. 2021             Microwave-Assisted Spectroscopy of Vacancy-Related Spin Centers in Hexagonal SiC, Z Shang, Y Berencén, M Hollenbach, S Zhou, H Kraus, T Ohshima, GV Astakhov, Phys. Rev. Applied 15, 034059 (Impact factor 6.4)
  2. 2020             Influence of irradiation on defect spin coherence in silicon carbide, C Kasper, D Klenkert, Z Shang, D Simin, A Gottscholl, A Sperlich, H Kraus, C Schneider, S Zhou, M Trupke, W Kada, T Ohshima, V Dyakonov, GV Astakhov, Phys. Rev. Applied 13, 044054 (IF 6.4)
  3. 2018             Creation of silicon vacancy in silicon carbide by proton beam writing toward quantum sensing applications, T Ohshima, T Satoh, H Kraus, GV Astakhov, V Dyakonov, PG Baranov, J. Phys. D: Appl. Phys. 33, 333002 (IF 3.0)
  4. 2018             Highly efficient optical pumping of spin defects in silicon carbide for stimulated microwave emission, M Fischer, A Sperlich, H Kraus, T Ohshima, GV Astakhov, V Dyakonov, Phys. Rev. Applied 9, 054006 (IF 6.4)
  5. 2017        Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide, H Kraus, D Simin, C. Kasper, Y Suda, Y Kawabata, W Kada, T Honda, Y Hijikata, T Ohshima, V Dyakonov, G Astakhov; Nano Letters 2017 (IF 11.2)
  6. 2017             Locking of electron spin coherence above 20 ms in natural silicon carbide, D Simin, H Kraus, A Sperlich, T Ohshima, GV Astakhov, V Dyakonov, Phys. Rev. B 95,161201 (IF 3.3)
  7. 2016             Analysis of triplet exciton loss pathways in PTB7: PC 71 BM bulk heterojunction solar cells, H Kraus, MC Heiber, S Väth, J Kern, C Deibel, A Sperlich, V Dyakonov, Sci. Rep. 6, 29158 (IF 4.4)
  8. 2015             High-precision angle-resolved magnetometry with uniaxial quantum centers in silicon carbide, D Simin, F Fuchs, H Kraus, A Sperlich, PG Baranov, GV Astakhov, V Dyakonov, Phys. Rev. Applied 4, 014009 (IF 6.4)
  9. 2014             Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide, H Kraus, VA Soltamov, F Fuchs, D Simin, A Sperlich, PG Baranov, GV Astakhov, V Dyakonov, Sci. Rep. 4, 5303 (IF 4.4)
  10. 2014         Room-temperature quantum microwave emitters based on spin defects in silicon carbide, H Kraus, VA Soltamov, D Riedel, S Väth, F Fuchs, A Sperlich, PG Baranov, V Dyakonov, GV Astakhov, Nature Physics 10, 157 (IF 21.8)
  11. 2014         Triplet–triplet exciton dynamics in single-walled carbon nanotubes, D Stich, F Späth, H Kraus, A Sperlich, V Dyakonov, T Hertel, Nature Photonics 8, 139 (IF 22.1)
  12. 2013         Multiple Reduction of 2, 5‐Bis (borolyl) thiophene: Isolation of a Negative Bipolaron by Comproportionation, H Braunschweig, V Dyakonov, B Engels, Z Falk, C Hörl, J Klein, T Kramer, H Kraus, I Krummenacher, C Lambert, C Walter, Angew. Chem. Intern. 52, 12852 (IF 15.3)
  13. 2012         Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide, D Riedel, F Fuchs, H Kraus, S Väth, A Sperlich, V Dyakonov, AA Soltamova, PG Baranov, VA Ilyin, GV Astakhov, Phys. Rev. Letters 109, 226402 (IF 9.2)
  14. 2011         Reversible and irreversible interactions of poly (3-hexylthiophene) with oxygen studied by spin-sensitive methods, A Sperlich, H Kraus, C Deibel, H Blok, J Schmidt, V Dyakonov, Phys. Chem. B 115,13513 (IF 3.0)
  15. 2011         Triplet exciton generation in bulk-heterojunction solar cells based on endohedral fullerenes, M Liedtke, A Sperlich, H Kraus, A Baumann, C Deibel, MJM Wirix, J Loos, CM Cardona, V Dyakonov, JACS 133,9088 (15.4)
  16. 2011         Photoinduced C70 radical anions in polymer:fullerene blends, A Sperlich, M Liedtke, J Kern, H Kraus, C Deibel, S Filippone, JL Delgado, N Martín, V Dyakonov, Phys. Stat. Solidi RRL 5,128 (IF 2.8)
  17. 2011         Observation of bi-polarons in blends of conjugated copolymers and fullerene derivatives, TJ Savenije, A Sperlich, H Kraus, O Poluektov, M Heeney, V Dyakonov, Phys. Chem. Chem. Phys. 13, 16579 (IF 3.6)

Books

  1. 2011         Interplay Between Microscopic Structure and Intermolecular Charge-Transfer Processes in Polymer–Fullerene Bulk Heterojunctions, V Dyakonov, H Kraus, A Sperlich, R Magerle, M Zerson, M Dehnert, Elementary Processes in Organic Photovoltaics 139-155, Springer

Proceedings

  1. 2018        Magnetic field sensing with 4H SiC diodes: N vs P implantation
  2. 2017        Creation and functionalization of defects in SiC by proton beam writing, T Ohshima, T Honda, S Onoda, T Makino, M Haruyama, T Kamiya, […], JC McCallum, S Castelletto, BC Gibson, H Kraus, V Dyakonov, GV Astakhov, Mat. Sci. For.  897, 233
  3. 2015             Atomic-scale defects in silicon carbide for quantum sensing applications, V Dyakonov, H Kraus, VA Soltamov, F Fuchs, D Simin, S Vaeth, A Sperlich, P Baranov, G Astakhov, Mat. Sci. For. 821, 355
  4. 2010             Spectroscopic Signatures of Photogenerated Radical Anions in Polymer-[C70] Fullerene Bulk Heterojunctions, M Liedtke, A Sperlich, H Kraus, C Deibel, V Dyakonov, S Filippone, JL Delgado, N Martín, OG Poluektov, ECS Transactions 28, 3

Oral Presentation – Invited

  1. 2023             IEEE Optics+Photonics, Spintronics XVI, San Diego, California
  2. 2023             Silicon Carbide Materials & Devices Workshop, Georgia Tech, Atlanta, Georgia
  3. 2023             AVS PCSI-48 Quantum Workshop
  4. 2021             7th Advancements in Nuclear Instrumentation Measurement Methods and their Applications Conference (ANIMMA), Prague, Czech, Workshop lecture, Crystalline Solid State Quantum Sensors for Space Applications – Magnetometers and other Sensing Applications leveraging Radiation Defects
  5. 2019             University of Stuttgart, Germany, Invited Seminar
  6. 2018             Saitama University, Japan, Invited Seminar
  7. 2018             Gunma University, Japan, Invited Seminar
  8. 2015             International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA), Kiryu, Japan 2015, Invited talk, Defect Engineering in Silicon Carbide: Single Photon Sources, Quantum Sensors and RF Emitters